Ultra-flat silicon wafers

These ultra-flat wafers can be used for substrate studies or as substrate for AFM and SEM samples by cleaving the wafer.Specifications4"6"8"Material:SiliconSiliconSiliconDiameter:100 mm150 mm200 mmOrientation:<100><100><100>Type/Dopant:P/BoronP/BoronP/BoronGrade:Prime/CZ VirginPrime/CZ VirginPrime/CZ VirginGrowth Method:CZCZCZResistivity:10-20 Ohm-cm10-20 Ohm-cm10-20 Ohm-cmThickness:525µm ±20µm675µm ±20µm725µm ±20µmTTV:

These ultra-flat wafers can be used for substrate studies or as substrate for AFM and SEM samples by cleaving the wafer.

Specifications

	4"	6"	8"
Material:	Silicon	Silicon	Silicon
Diameter:	100 mm	150 mm	200 mm
Orientation:	<100>	<100>	<100>
Type/Dopant:	P/Boron	P/Boron	P/Boron
Grade:	Prime/CZ Virgin	Prime/CZ Virgin	Prime/CZ Virgin
Growth Method:	CZ	CZ	CZ
Resistivity:	10-20 Ohm-cm	10-20 Ohm-cm	10-20 Ohm-cm
Thickness:	525µm ±20µm	675µm ±20µm	725µm ±20µm
TTV:	<4.00µm	<4.00µm	<4.00µm
SFPD:	<2.0µm	<2.0µm	<2.0µm
Warp:	≤30µm	≤30µm	≤30µm
Bow:	≤30µm	≤30µm	≤30µm
Particles:	≤20@≥0.3µm	≤20@≥0.3µm	≤20@≥0.3µm
Front Surface:	Polished	Polished	Polished
Back Surface:	Etched	Etched	Etched
Flat:	2 per SEMI Standard	1 per SEMI Standard	2 per SEMI Standard
Site Flatness:	<2.0µm	<2.0µm	<2.0µm
Roughness:	Typically 2-3?	Typically 2-3?	Typically 2-3?

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